NCE60ND18G MOSFET Datasheet & Specifications

N-Channel DFN5X6-8L Logic-Level NCE
Vds Max
60V
Id Max
18A
Rds(on)
40mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The NCE60ND18G is an N-Channel MOSFET in a DFN5X6-8L package, manufactured by NCE. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 18A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageDFN5X6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)18AMax current handling
Power Dissipation (Pd)45WMax thermal limit
On-Resistance (Rds(on))40mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)25nCSwitching energy
Input Capacitance (Ciss)973pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NCEP035N60AG N-Channel DFN5X6-8L 60V 110A 4.5mΩ@4.5V 2.4V
NCEP6080AG N-Channel DFN5X6-8L 60V 80A 5mΩ@4.5V 2.4V