NCE3080K MOSFET Datasheet & Specifications

N-Channel TO-252-2L Logic-Level NCE
Vds Max
30V
Id Max
80A
Rds(on)
10mΩ@5V
Vgs(th)
3V

Quick Reference

The NCE3080K is an N-Channel MOSFET in a TO-252-2L package, manufactured by NCE. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 80A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)80AMax current handling
Power Dissipation (Pd)83WMax thermal limit
On-Resistance (Rds(on))10mΩ@5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)51nC@10VSwitching energy
Input Capacitance (Ciss)2.33nFInternal gate capacitance
Output Capacitance (Coss)460pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HYG024N03LR1D N-Channel TO-252-2L 30V 100A 3.6mΩ@4.5V 3V
HUAYI 📄 PDF
NCE30H12K N-Channel TO-252-2L 30V 120A 4.5mΩ@10V 3V
NCE3080KA N-Channel TO-252-2L 30V 80A 10mΩ@5V 1.4V
NCE40H12K N-Channel TO-252-2L 40V 120A 7mΩ@4.5V 2.5V
HYG025N06LS1D N-Channel TO-252-2L 60V 160A 3.3mΩ@10V 3V
HUAYI 📄 PDF
NCEP60T12AK N-Channel TO-252-2L 60V 120A 4mΩ@10V 2.4V
NCE6080AK N-Channel TO-252-2L 60V 80A 7.8mΩ@4.5V 1.8V
IRFR7546PBF-HXY N-Channel TO-252-2L 60V 80A 8.3mΩ@10V 3V
HXY MOSFET 📄 PDF
CJU80SN10 N-Channel TO-252-2L 100V 80A 10.5mΩ@4.5V 2.5V