NCE2003 MOSFET Datasheet & Specifications
P-Channel
SOT-23-6L
Logic-Level
NCE
Vds Max
20V
Id Max
3A
Rds(on)
100mΩ@2.5V
Vgs(th)
1.2V
Quick Reference
The NCE2003 is an P-Channel MOSFET in a SOT-23-6L package, manufactured by NCE. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | NCE | Original Manufacturer |
| Package | SOT-23-6L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3A | Max current handling |
| Power Dissipation (Pd) | 800mW | Max thermal limit |
| On-Resistance (Rds(on)) | 100mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |