NCE0103M MOSFET Datasheet & Specifications

N-Channel SOT-89-3L Logic-Level NCE
Vds Max
100V
Id Max
3A
Rds(on)
170mΩ@4.5V
Vgs(th)
2V

Quick Reference

The NCE0103M is an N-Channel MOSFET in a SOT-89-3L package, manufactured by NCE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))170mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)20nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XR10N10Q N-Channel SOT-89-3L 100V 10A 112mΩ@10V 2.5V
XNRUSEMI 📄 PDF