MS66N85IDB3 MOSFET Datasheet & Specifications
N-Channel
TO-264
High-Voltage
MASPOWER
Vds Max
850V
Id Max
66A
Rds(on)
83mΩ@15V
Vgs(th)
4.6V
Quick Reference
The MS66N85IDB3 is an N-Channel MOSFET in a TO-264 package, manufactured by MASPOWER. It supports a drain-source breakdown voltage of 850V and a continuous drain current of 66A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MASPOWER | Original Manufacturer |
| Package | TO-264 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 850V | Max breakdown voltage |
| Continuous Drain Current (Id) | 66A | Max current handling |
| Power Dissipation (Pd) | 1.25kW | Max thermal limit |
| On-Resistance (Rds(on)) | 83mΩ@15V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.6V | Voltage required to turn on |
| Gate Charge (Qg) | 220nC@10V | Switching energy |
| Input Capacitance (Ciss) | 8.6nF | Internal gate capacitance |
| Output Capacitance (Coss) | 8.5nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||