MPSA29-D26Z Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-92-3LGeneral Purpose
VCEO
-
Ic Max
100V
Pd Max
800mA
Gain
-55โ„ƒ~+150โ„ƒ@(Tj)

Quick Reference

The MPSA29-D26Z is a NPN bipolar transistor in a TO-92-3L package. This datasheet provides complete specifications including - breakdown voltage and 100V continuous collector current. Download the MPSA29-D26Z datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92-3LPhysical mounting
VCEO-Breakdown voltage
IC Max100VCollector current
Pd Max800mAPower dissipation
Gain-55โ„ƒ~+150โ„ƒ@(Tj)DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo125MHzEmitter-Base voltage
Temp625mWOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BC547CBUNPNTO-92-3L-45V100mA
BC33725BUNPNTO-92-3L-50V800mA
KSP2222ABUNPNTO-92-3L-40V600mA