MPSA29-D26Z Datasheet & Equivalents

NPN TO-92 General Purpose onsemi
VCEO
100V
Ic Max
800mA
Pd Max
625mW
hFE Gain
10000

Quick Reference

The MPSA29-D26Z is a NPN bipolar junction transistor in a TO-92 package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)800mAMax current handling
Power Dissipation (Pd)625mWMax thermal limit
DC Current Gain (hFE)10000Base signal amplification ratio
Transition Frequency (fT)125MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD667A-C NPN TO-92 100V 1A 100 900mW
BLUE ROCKET ๐Ÿ“„ PDF
KTC1027-Y-AT/P NPN TO-92 120V 800mA 80 1W
ZTX605 NPN TO-92 120V 1A 2000 1W
2SD1857L-Q-T92-B NPN TO-92 120V 2A 120 625mW
ZTX455 NPN TO-92 140V 1A 100 1W
ZTX455STZ NPN TO-92 140V 1A 100 1W
2SC2383-Y NPN TO-92 160V 1A 320 700mW
KSC2383OTA NPN TO-92 160V 1A 60 900mW