MMST5551 Transistor Datasheet & Specifications

NPN BJT | R+O

NPNSOT-323General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
200mW
Gain
300
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Quick Reference

The MMST5551 is a NPN bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMST5551 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition speed
VCEsat150mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMST5551-7-FNPNSOT-323160V200mA200mW
2SC4102T106RNPNSOT-323120V50mA200mW
MMST5551Q-7-FNPNSOT-323160V200mA200mW
MMST5551-JSMNPNSOT-323160V600mA200mW
MMSTA06-7-F-HXYNPNSOT-323160V600nA200mW
BC816-25WX-HXYNPNSOT-323160V600mA200mW
MMBTA06WT1G-HXYNPNSOT-323160V600mA200mW
PMST5551-HXYNPNSOT-323160V600nA200mW
MMST5551(RANGE:100-300)NPNSOT-323160V600mA200mW
View all SOT-323 NPN Transistors ›