MMFTN3019E MOSFET Datasheet & Specifications
N-Channel
SOT-523-3
Logic-Level
ST(Semtech)
Vds Max
30V
Id Max
100mA
Rds(on)
8Ω@4V
Vgs(th)
1.5V
Quick Reference
The MMFTN3019E is an N-Channel MOSFET in a SOT-523-3 package, manufactured by ST(Semtech). It supports a drain-source breakdown voltage of 30V and a continuous drain current of 100mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST(Semtech) | Original Manufacturer |
| Package | SOT-523-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 8Ω@4V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 13pF | Internal gate capacitance |
| Output Capacitance (Coss) | 9pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||