MMDT5401G Datasheet & Equivalents
NPN+PNP
SOT-363
General Purpose
LGE
VCEO
150V
Ic Max
200mA
Pd Max
200mW
hFE Gain
60
Quick Reference
The MMDT5401G is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by LGE. It supports a breakdown voltage of 150V and continuous collector current of 200mA per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LGE | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 150V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 60 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TPMMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 80 | 200mW | TECH PUBLIC 📄 PDF |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 80 | 200mW | amsem 📄 PDF |
| MMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 100 | 200mW | LGE 📄 PDF |
| MMBT5451DW | NPN+PNP | SOT-363 | 160V | 200mA | 300 | 200mW | YFW 📄 PDF |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 300 | 200mW | MSKSEMI 📄 PDF |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 300 | 200mW | BLUE ROCKET 📄 PDF |