MMDT3906DW Datasheet & Equivalents
PNP
SOT-363
General Purpose
Huixin
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
-
Quick Reference
The MMDT3906DW is a PNP bipolar junction transistor in a SOT-363 package, manufactured by Huixin. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Huixin | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 250MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV@50mA,5mA | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 60 | 200mW | JSCJ 📄 PDF |
| HMMDT39067F | PNP | SOT-363 | 40V | 200mA | 100 | 200mW | HXY MOSFET 📄 PDF |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 100 | 200mW | LGE 📄 PDF |
| MBT3906DW1T1G-HXY | PNP | SOT-363 | 40V | 200mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMBT3906WH | PNP | SOT-363 | 40V | 200mA | 300 | 200mW | Jingdao Micro... 📄 PDF |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 300 | 200mW | HT(Shenzhen J... 📄 PDF |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 300 | 200mW | TWGMC 📄 PDF |