MMBTA64LT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
30V
Ic Max
500mA
Pd Max
225mW
Gain
20000@5V,100mA

Quick Reference

The MMBTA64LT1G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 30V breakdown voltage and 500mA continuous collector current. Download the MMBTA64LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO30VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain20000@5V,100mADC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo125MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
SS8550PNPSOT-2325V1.5A300mW
S9012PNPTO-92-25V500mA
S8550PNPSOT-2325V500mA300mW
S9012PNPTO-92-25V500mA
S9012PNPTO-92-25V500mA
SS8550PNPSOT-2325V1.5A300mW
ZXTP23015CFHTAPNPSOT-2325V6A1.25W
SS8550(RANGE:300-400)PNPSOT-2325V1.5A300mW