MMBTA55LT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
60V
Ic Max
500mA
Pd Max
225mW
Gain
100

Quick Reference

The MMBTA55LT1G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the MMBTA55LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO60VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain100DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-FPNPSOT-2360V600mA350mW
BC856ALT1GPNPSOT-2365V100mA225mW
ZXTP2025FTAPNPSOT-2350V5A1.2W
2SA812PNPSOT-2350V100mA300mW
LBC856BLT1GPNPSOT-2365V100mA225mW
LBC807-40LT1GPNPSOT-2345V500mA225mW
MMBT2907APNPSOT-2360V600mA250mW
MMBT2907APNPSOT-2360V600mA250mW
FMMT591TAPNPSOT-2360V1A500mW