MMBT9012G-I-AE3-R Datasheet & Equivalents

PNP SOT-23 General Purpose UTC
VCEO
20V
Ic Max
500mA
Pd Max
225mW
hFE Gain
190

Quick Reference

The MMBT9012G-I-AE3-R is a PNP bipolar junction transistor in a SOT-23 package, manufactured by UTC. It supports a breakdown voltage of 20V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)20VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)190Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
9012M-H PNP SOT-23 20V 500mA 144 450mW
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FMMTL718TA PNP SOT-23 20V 1A 200 500mW
MMS9012-H-TP PNP SOT-23 25V 500mA 200 300mW
S8550 PNP SOT-23 25V 500mA 200 300mW
BC808-25LT1G PNP SOT-23 25V 500mA 160 225mW
S8550 2TY(RANGE:200-350) PNP SOT-23 25V 500mA 120 300mW
S8550(RANGE:120-200) PNP SOT-23 25V 500mA 120 300mW
S9012 2T1(RANGE:200-350) PNP SOT-23 25V 500mA 120 300mW
S9012(RANGE:120-200) PNP SOT-23 25V 500mA 120 300mW
S8550 PNP SOT-23 25V 500mA 120 300mW
S8550 PNP SOT-23 25V 500mA 120 300mW
S8550 PNP SOT-23 25V 500mA 120 300mW
S8550 PNP SOT-23 25V 500mA 120 300mW
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S8550 PNP SOT-23 25V 500mA 120 300mW
S9012 PNP SOT-23 25V 500mA 120 300mW
S9012 PNP SOT-23 25V 500mA 120 300mW
S9012 PNP SOT-23 25V 500mA 120 300mW
S9012 PNP SOT-23 25V 500mA 260 300mW
S9012 PNP SOT-23 25V 500mA 120 300mW
S9012 PNP SOT-23 25V 500mA 40 300mW