MMBT8050D(J3Y) Transistor Datasheet & Specifications
NPNSOT-23General Purpose
VCEO
25V
Ic Max
600mA
Pd Max
350mW
Gain
160
Quick Reference
The MMBT8050D(J3Y) is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 25V breakdown voltage and 600mA continuous collector current. Download the MMBT8050D(J3Y) datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST(Semtech) | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| VCEO | 25V | Breakdown voltage |
| IC Max | 600mA | Collector current |
| Pd Max | 350mW | Power dissipation |
| Gain | 160 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | - | Operating temp |