MMBT8050D Transistor Datasheet & Specifications

PNP BJT | PJSEMI

PNPSOT-23General Purpose
VCEO
25V
Ic Max
600mA
Pd Max
350mW
Gain
400

Quick Reference

The MMBT8050D is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 25V breakdown voltage and 600mA continuous collector current. Download the MMBT8050D datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPJSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO25VBreakdown voltage
IC Max600mACollector current
Pd Max350mWPower dissipation
Gain400DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FMMTL718TAPNPSOT-2320V1A500mW
SS8550PNPSOT-2325V1.5A300mW
2SA1585(RANGE:180-390)PNPSOT-2320V2A350mW
S9012PNPTO-92-25V500mA
S8550PNPSOT-2325V500mA300mW
S9012PNPTO-92-25V500mA
S9012PNPTO-92-25V500mA
SS8550PNPSOT-2325V1.5A300mW
DSS5320T-7PNPSOT-2320V2A600mW