MMBT8050D Datasheet & Equivalents

PNP SOT-23 General Purpose PJSEMI
VCEO
25V
Ic Max
600mA
Pd Max
350mW
hFE Gain
400

Quick Reference

The MMBT8050D is a PNP bipolar junction transistor in a SOT-23 package, manufactured by PJSEMI. It supports a breakdown voltage of 25V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPJSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)400Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SB624 PNP SOT-23 25V 700mA 400 200mW
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2SA1298-Y PNP SOT-23 25V 800mA 100 200mW
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SS8550 Y2 0.52 PNP SOT-23 25V 1.5A 400 300mW
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Guangdong Hot... ๐Ÿ“„ PDF
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SS8550 PNP SOT-23 25V 1.5A 400 200mW
SS8550 Y2 PNP SOT-23 25V 1.5A 350 300mW
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MPS8550S-D-HXY PNP SOT-23 25V 1.5A 320 350mW