MMBT6427LT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
40V
Ic Max
500mA
Pd Max
225mW
Gain
20000

Quick Reference

The MMBT6427LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 40V breakdown voltage and 500mA continuous collector current. Download the MMBT6427LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO40VBreakdown voltage
IC Max500mACollector current
Pd Max225mWPower dissipation
Gain20000DC current gain
Frequency-Transition speed
VCEsat1.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FMMT491ATANPNSOT-2340V1A500mW
BC817-16LT1GNPNSOT-2345V500mA225mW
BC817-40LT1GNPNSOT-2345V500mA225mW
MMBT3904-7-FNPNSOT-2340V200mA310mW
S9014NPNSOT-2345V100mA300mW
ZXTN2040FTANPNSOT-2340V1A310mW
BC817-40Q-7-FNPNSOT-2345V500mA310mW
BC847B-7-FNPNSOT-2345V100mA300mW
MMBT3904NPNSOT-23-40V200mA
MMBT4401NPNSOT-2340V600mA300mW