MMBT5551T Datasheet & Equivalents
NPN
SOT-523
General Purpose
R+O
VCEO
160V
Ic Max
600mA
Pd Max
200mW
hFE Gain
-
Quick Reference
The MMBT5551T is a NPN bipolar junction transistor in a SOT-523 package, manufactured by R+O. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300@10mA,5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 150mV | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃@(Tj) | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HMMBT5551T | NPN | SOT-523 | 160V | 600mA | 100 | 300mW | HXY MOSFET 📄 PDF |