MMBT5551M3T5G Transistor Datasheet & Specifications
NPNSOT-723General Purpose
VCEO
160V
Ic Max
60mA
Pd Max
640mW
Gain
80
Quick Reference
The MMBT5551M3T5G is a NPN bipolar transistor in a SOT-723 package. This datasheet provides complete specifications including 160V breakdown voltage and 60mA continuous collector current. Download the MMBT5551M3T5G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 60mA | Collector current |
| Pd Max | 640mW | Power dissipation |
| Gain | 80 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|