MMBT5551LT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
300mW
Gain
80
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Quick Reference

The MMBT5551LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain80DC current gain
Frequency-Transition speed
VCEsat250mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBTA42NPNSOT-23300V300mA350mW
MMBT5551NPNSOT-23160V600mA225mW
MMBT5551NPNSOT-23160V600mA225mW
FMMT495TANPNSOT-23150V1A500mW
FMMT624TANPNSOT-23125V1A625mW
MMBT5551-TPNPNSOT-23160V600mA300mW
MMBT5551-ENPNSOT-23160V600mA300mW
MMBT5551NPNSOT-23160V600mA225mW
MMBT5551NPNSOT-23160V600mA225mW
View all SOT-23 NPN Transistors ›