MMBT5551 Datasheet & Equivalents
NPN
SOT-23
General Purpose
AnBon
VCEO
160V
Ic Max
600mA
Pd Max
225mW
hFE Gain
80
Quick Reference
The MMBT5551 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by AnBon. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | AnBon | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 225mW | Max thermal limit |
| DC Current Gain (hFE) | 80 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 200mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2N5551S-RTK/P | NPN | SOT-23 | 160V | 600mA | 80 | 350mW | KEC 📄 PDF |
| LMBT5551LT1G | NPN | SOT-23 | 160V | 600mA | 80 | 225mW | LRC 📄 PDF |
| MMBT5551-AU_R1_000A2 | NPN | SOT-23 | 160V | 600mA | 80 | 250mW | PANJIT 📄 PDF |
| MMBT5551LT1G | NPN | SOT-23 | 160V | 600mA | 80 | 300mW | onsemi 📄 PDF |
| SMMBT5551LT1G | NPN | SOT-23 | 160V | 600mA | 80 | 300mW | onsemi 📄 PDF |
| 2N5551 | NPN | SOT-23 | 160V | 600mA | 80 | 300mW | RUILON 📄 PDF |
| MMBT5551(RANGE:100-200) | NPN | SOT-23 | 160V | 600mA | 100 | 300mW | JSCJ 📄 PDF |
| MMBT5551-TP | NPN | SOT-23 | 160V | 600mA | 100 | 300mW | MCC 📄 PDF |
| MMBT5551G-B-AE3-R | NPN | SOT-23 | 160V | 600mA | 150 | 350mW | UTC 📄 PDF |
| 2N5551 | NPN | SOT-23 | 160V | 600mA | - | 300mW | GOODWORK 📄 PDF |
| MMBT5551(RANGE:200-300) | NPN | SOT-23 | 160V | 600mA | 200 | 300mW | JSCJ 📄 PDF |
| PMBT5551-HXY | NPN | SOT-23 | 160V | 600mA | 200 | 300mW | HXY MOSFET 📄 PDF |
| 2L-MMBT5401 | NPN | SOT-23 | 160V | 600mA | 300 | 300mW | GOODWORK 📄 PDF |
| 2N5551S-HXY | NPN | SOT-23 | 160V | 600mA | 300 | 300mW | HXY MOSFET 📄 PDF |
| G1-MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300 | 300mW | GOODWORK 📄 PDF |
| MMBT5551 G1 | NPN | SOT-23 | 160V | 600mA | 300 | 300mW | TDSEMIC 📄 PDF |
| MMBT5551-E | NPN | SOT-23 | 160V | 600mA | 300 | 300mW | MDD(Microdiod... 📄 PDF |
| MMBT5551LT1G-CN | NPN | SOT-23 | 160V | 600mA | 300 | 300mW | ChipNobo 📄 PDF |