MMBT5550LT3G Datasheet & Equivalents
NPN
SOT-23
General Purpose
onsemi
VCEO
140V
Ic Max
600nA
Pd Max
225mW
hFE Gain
60
Quick Reference
The MMBT5550LT3G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 140V and continuous collector current of 600nA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 140V | Max breakdown voltage |
| Collector Current (Ic) | 600nA | Max current handling |
| Power Dissipation (Pd) | 225mW | Max thermal limit |
| DC Current Gain (hFE) | 60 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 150mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||