MMBT5550LT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
140V
Ic Max
600mA
Pd Max
225mW
Gain
60
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Quick Reference

The MMBT5550LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 140V breakdown voltage and 600mA continuous collector current. Download the MMBT5550LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO140VBreakdown voltage
IC Max600mACollector current
Pd Max225mWPower dissipation
Gain60DC current gain
Frequency-Transition speed
VCEsat250mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTANPNSOT-23100V4A1.2W
FMMT415TDNPNSOT-23100V500mA500mW
MMBT5551NPNSOT-23160V600mA225mW
MMBT5551NPNSOT-23160V600mA225mW
ZXTN25100DFHTANPNSOT-23100V2.5A1.25W
NSS1C201LT1GNPNSOT-23100V2A710mW
FMMT493TANPNSOT-23100V1A500mW
FMMT493NPNSOT-23100V1A250mW
FMMT495TANPNSOT-23150V1A500mW
FMMT624TANPNSOT-23125V1A625mW
View all SOT-23 NPN Transistors ›