MMBT5089LT1G Transistor Datasheet & Specifications
NPNSOT-23General Purpose
VCEO
25V
Ic Max
50mA
Pd Max
300mW
Gain
400
Quick Reference
The MMBT5089LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 25V breakdown voltage and 50mA continuous collector current. Download the MMBT5089LT1G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| VCEO | 25V | Breakdown voltage |
| IC Max | 50mA | Collector current |
| Pd Max | 300mW | Power dissipation |
| Gain | 400 | DC current gain |
| Frequency | 50MHz | Transition speed |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 4.5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |