MMBT4124LT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23-3General Purpose
VCEO
25V
Ic Max
200mA
Pd Max
225mW
Gain
120

Quick Reference

The MMBT4124LT1G is a NPN bipolar transistor in a SOT-23-3 package. This datasheet provides complete specifications including 25V breakdown voltage and 200mA continuous collector current. Download the MMBT4124LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23-3Physical mounting
VCEO25VBreakdown voltage
IC Max200mACollector current
Pd Max225mWPower dissipation
Gain120DC current gain
Frequency300MHzTransition speed
VCEsat300mVSaturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
HT8050ARTZNPNSOT-23-325V1.5A300mW