MMBT3906TT1G Transistor Datasheet & Specifications
PNPSOT-416General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
300mW
Gain
60
Quick Reference
The MMBT3906TT1G is a PNP bipolar transistor in a SOT-416 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906TT1G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-416 | Physical mounting |
| VCEO | 40V | Breakdown voltage |
| IC Max | 200mA | Collector current |
| Pd Max | 300mW | Power dissipation |
| Gain | 60 | DC current gain |
| Frequency | 250MHz | Transition speed |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA1774TLR | PNP | SOT-416 | 50V | 150mA | 150mW |
| 2SAR523EBTL | PNP | SOT-416 | 50V | 100mA | 150mW |