MMBT3906T-MS Datasheet & Equivalents
PNP
SOT-523
General Purpose
MSKSEMI
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
100
Quick Reference
The MMBT3906T-MS is a PNP bipolar junction transistor in a SOT-523 package, manufactured by MSKSEMI. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 250MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBT3906T | PNP | SOT-523 | 40V | 200mA | 60 | 150mW | BORN 📄 PDF |
| MMBT3906T | PNP | SOT-523 | 40V | 200mA | - | 150mW | R+O |
| MMBT3906T | PNP | SOT-523 | 40V | 200mA | 300 | 150mW | DOWO 📄 PDF |
| MMBT3906T | PNP | SOT-523 | 40V | 200mA | 300 | 150mW | Shikues 📄 PDF |
| MMBT3906T | PNP | SOT-523 | 40V | 200mA | 300 | 150mW | GOODWORK 📄 PDF |