MMBT3906M-JSM Datasheet & Equivalents
PNP
SOT-723
General Purpose
JSMSEMI
VCEO
40V
Ic Max
200mA
Pd Max
100mW
hFE Gain
300
Quick Reference
The MMBT3906M-JSM is a PNP bipolar junction transistor in a SOT-723 package, manufactured by JSMSEMI. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 100mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBT3906M | PNP | SOT-723 | 40V | 200mA | 300 | 100mW | TECH PUBLIC 📄 PDF |
| MMBT3906M | PNP | SOT-723 | 40V | 200mA | 300 | 200mW | YONGYUTAI 📄 PDF |
| MMBT3906M | PNP | SOT-723 | 40V | 200mA | 100 | 100mW | MSKSEMI 📄 PDF |
| MMBT3906M | PNP | SOT-723 | 40V | 200mA | 100 | 100mW | amsem 📄 PDF |
| MMBT3906M | PNP | SOT-723 | 40V | 200mA | 100 | 100mW | JSCJ 📄 PDF |
| MMBT2907AM3T5G-MS | PNP | SOT-723 | 60V | 500mA | 300 | 100mW | MSKSEMI 📄 PDF |