MMBT3906LT1 Datasheet & Equivalents

PNP SOT-23 General Purpose LGE
VCEO
40V
Ic Max
100mA
Pd Max
250mW
hFE Gain
100

Quick Reference

The MMBT3906LT1 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by LGE. It supports a breakdown voltage of 40V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)250mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)250MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
PMBS3906 PNP SOT-23 40V 100mA 100 250mW
Nexperia ๐Ÿ“„ PDF
215 PNP SOT-23 40V 100mA 100 250mW
MMBT3906 PNP SOT-23 40V 200mA 100 200mW
MMBT3906 2A(RANGE:100-300) PNP SOT-23 40V 200mA 100 250mW
Nexperia ๐Ÿ“„ PDF
MMBT3906 PNP SOT-23 40V 200mA 100 350mW
215 PNP SOT-23 40V 200mA 100 300mW
MMBT3906-7-F PNP SOT-23 40V 200mA 100 350mW
MMBT3906-TP PNP SOT-23 40V 200mA 100 300mW
MMBT3906Q-7-F PNP SOT-23 40V 200mA 100 200mW
MMBT3906 PNP SOT-23 40V 200mA 100 200mW
MMBT3906 PNP SOT-23 40V 200mA 100 200mW
MMBT3906 PNP SOT-23 40V 200mA 100 200mW
MMBT3906 PNP SOT-23 40V 200mA 100 300mW
BLUE ROCKET ๐Ÿ“„ PDF
MMBT3906 PNP SOT-23 40V 200mA 100 200mW
MMBT3906 PNP SOT-23 40V 200mA 100 300mW
MMBT3906 PNP SOT-23 40V 200mA 100 350mW
ST(Semtech) ๐Ÿ“„ PDF
MMBT3906 PNP SOT-23 40V 200mA 100 250mW
MMBT3906 PNP SOT-23 40V 200mA 100 200mW
MMBT3906 PNP SOT-23 40V 200mA 70 300mW
MMBT3906 PNP SOT-23 40V 200mA 60 225mW