MMBT3904TT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-416General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
100

Quick Reference

The MMBT3904TT1G is a NPN bipolar transistor in a SOT-416 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904TT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-416Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain100DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SC4617TLQNPNSOT-41650V150mA200mW