MMBT3904T Datasheet & Equivalents
NPN
SOT-523
General Purpose
BORN
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
40
Quick Reference
The MMBT3904T is a NPN bipolar junction transistor in a SOT-523 package, manufactured by BORN. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | BORN | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 40 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBT3904T-7-F | NPN | SOT-523 | 40V | 200mA | 100 | 150mW | DIODES 📄 PDF |
| MMBT3904T-MS | NPN | SOT-523 | 40V | 200mA | 100 | 150mW | MSKSEMI 📄 PDF |
| MMBT3904FX | NPN | SOT-523 | 40V | 200mA | 300 | 200mW | JingYang 📄 PDF |
| MMBT3904T(RANGE:100-300) | NPN | SOT-523 | 40V | 200mA | 300 | 150mW | JSCJ 📄 PDF |
| MMBT3904T-JSM | NPN | SOT-523 | 40V | 200mA | 300 | 250mW | JSMSEMI 📄 PDF |