MMBT3904LP Transistor Datasheet & Specifications
NPNDFN1006-3LGeneral Purpose
VCEO
40V
Ic Max
200mA
Pd Max
300mW
Gain
-
Quick Reference
The MMBT3904LP is a NPN bipolar transistor in a DFN1006-3L package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3904LP datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YONGYUTAI | Original Manufacturer |
| Package | DFN1006-3L | Physical mounting |
| VCEO | 40V | Breakdown voltage |
| IC Max | 200mA | Collector current |
| Pd Max | 300mW | Power dissipation |
| Gain | - | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 300MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PMBT3904MB-TP | NPN | DFN1006-3L | 50V | 100mA | 100mW |