MMBT3904DFN Datasheet & Equivalents
NPN
DFN-1006
General Purpose
MSKSEMI
VCEO
40V
Ic Max
200mA
Pd Max
300mW
hFE Gain
300
Quick Reference
The MMBT3904DFN is a NPN bipolar junction transistor in a DFN-1006 package, manufactured by MSKSEMI. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | DFN-1006 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBT3904LP | NPN | DFN-1006 | 40V | 200mA | 300 | 300mW | YONGYUTAI 📄 PDF |