MMBT2484LT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
60V
Ic Max
100mA
Pd Max
225mW
hFE Gain
250

Quick Reference

The MMBT2484LT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)250Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)350mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current10nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
SST3904T116 NPN SOT-23 60V 150mA 100 350mW
2SC2412 NPN SOT-23 60V 150mA - 200mW
GOODWORK ๐Ÿ“„ PDF
PMBT3904 NPN SOT-23 60V 200mA 300 200mW
BC846A NPN SOT-23 65V 100mA 220 200mW
GOODWORK ๐Ÿ“„ PDF
BC846B(RANGE:200-450) NPN SOT-23 65V 100mA 200 200mW
BC846B NPN SOT-23 65V 100mA 200 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 65V 100mA 200 300mW
BC846B-7-F NPN SOT-23 65V 100mA 200 225mW
BC846BHE3-TP NPN SOT-23 65V 100mA 200 310mW
BC846BQ-13-F NPN SOT-23 65V 100mA 200 200mW
BC846B NPN SOT-23 65V 100mA 200 200mW
BC846B NPN SOT-23 65V 100mA 200 200mW
BC846B NPN SOT-23 65V 100mA 200 250mW
BC846B NPN SOT-23 65V 100mA 150 250mW
BC846B NPN SOT-23 65V 100mA 110 250mW
Nexperia ๐Ÿ“„ PDF
BC846 NPN SOT-23 65V 100mA 110 350mW
215 NPN SOT-23 65V 100mA 110 225mW
BC846A-7-F NPN SOT-23 65V 100mA 110 310mW
BC846ALT1G NPN SOT-23 65V 100mA 110 330mW
BC846AQ-7-F NPN SOT-23 65V 100mA 110 250mW
Nexperia ๐Ÿ“„ PDF