MMBT2222LT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-23General Purpose
VCEO
30V
Ic Max
600mA
Pd Max
300mW
Gain
35
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Quick Reference

The MMBT2222LT1G is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 30V breakdown voltage and 600mA continuous collector current. Download the MMBT2222LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO30VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain35DC current gain
Frequency250MHzTransition speed
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT5089NPNSOT-2325V100mA200mW
SS8050NPNSOT-2340V1.5A300mW
S9013NPNSOT-2330V500mA300mW
S9014NPNSOT-2345V100mA300mW
SS8050NPNSOT-2340V1.5A300mW
S8050NPNSOT-2325V500mA300mW
BC818-40LT1GNPNSOT-2325V500mA225mW
MMSS8050-H-TPNPNSOT-2325V1.5A300mW
MMS9013-H-TPNPNSOT-2325V500mA300mW
View all SOT-23 NPN Transistors ›