MMBT2222AWT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSC-70(SOT-323)General Purpose
VCEO
40V
Ic Max
600mA
Pd Max
150mW
Gain
35

Quick Reference

The MMBT2222AWT1G is a NPN bipolar transistor in a SC-70(SOT-323) package. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the MMBT2222AWT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting
VCEO40VBreakdown voltage
IC Max600mACollector current
Pd Max150mWPower dissipation
Gain35DC current gain
Frequency300MHzTransition speed
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SC4081T106RNPNSC-70(SOT-323)50V150mA200mW
2SCR523UBTLNPNSC-70(SOT-323)50V100mA200mW
MMBT4401WT1GNPNSC-70(SOT-323)40V600mA150mW
MMBT3904WT1GNPNSC-70(SOT-323)40V200mA150mW
2SC4081U3HZGT106QNPNSC-70(SOT-323)50V150mA200mW
2SC4081UBTLRNPNSC-70(SOT-323)50V150mA200mW
SMMBT3904WT1GNPNSC-70(SOT-323)40V200mA150mW
LMBT3904WT1GNPNSC-70(SOT-323)40V200mA150mW
2SC4097T106RNPNSC-70(SOT-323)32V500mA200mW