MJH11019G Datasheet & Equivalents
PNP
TO-247
High Power
onsemi
VCEO
200V
Ic Max
15A
Pd Max
150W
hFE Gain
-
Quick Reference
The MJH11019G is a PNP bipolar junction transistor in a TO-247 package, manufactured by onsemi. It supports a breakdown voltage of 200V and continuous collector current of 15A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 200V | Max breakdown voltage |
| Collector Current (Ic) | 15A | Max current handling |
| Power Dissipation (Pd) | 150W | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 3MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 4V@15A,150mA | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -65℃~+150℃@(Tj) | Safe junction temperature range |