MJE350 Datasheet & Equivalents
PNP
TO-126
General Purpose
HXY MOSFET
VCEO
300V
Ic Max
500mA
Pd Max
625mW
hFE Gain
-
Quick Reference
The MJE350 is a PNP bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 300V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 625mW | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV@20mA,2mA | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||