MJE350 Datasheet & Equivalents
PNP
SOT-32
High Power
ST
VCEO
300V
Ic Max
500mA
Pd Max
20.8W
hFE Gain
30
Quick Reference
The MJE350 is a PNP bipolar junction transistor in a SOT-32 package, manufactured by ST. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | SOT-32 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 300V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 20.8W | Max thermal limit |
| DC Current Gain (hFE) | 30 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 3V | Max emitter-base breakdown |
| Collector Cutoff Current | 100uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||