MJE340 Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
350V
Ic Max
500mA
Pd Max
625mW
Gain
250@1A,2V

Quick Reference

The MJE340 is a NPN bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 350V breakdown voltage and 500mA continuous collector current. Download the MJE340 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
VCEO350VBreakdown voltage
IC Max500mACollector current
Pd Max625mWPower dissipation
Gain250@1A,2VDC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJE13003(RANGE:20-30)NPNTO-126400V1A1.25W
3DD4242DM-126NPNTO-126400V1.5A20W
13003NPNTO-126400V2A30W
MJE340GNPNTO-225-3300V500mA20W
3DD4244DMNPNTO-126400V3A60W
MJE340STU-HXYNPNTO-126350V500mA625mW