MJE253G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPTO-225-3General Purpose

VCEO

100V

Ic Max

Pd Max

15W

Gain

180

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Quick Reference

The MJE253G is a PNP bipolar transistor in a TO-225-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the MJE253G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

Parameter	Value	Description
Manufacturer	onsemi	Original Manufacturer
Package	TO-225-3	Physical mounting
VCEO	100V	Breakdown voltage
IC Max	4A	Collector current
Pd Max	15W	Power dissipation
Gain	180	DC current gain
Frequency	40MHz	Transition speed
VCEsat	600mV	Saturation voltage
Vebo	7V	Emitter-Base voltage
Temp	-65℃~+150℃	Operating temp

Direct Replacements & Alternatives

Part	Type	Package	VCEO	Ic	Pd
BD180G	PNP	TO-225-3	80V	1A	30W
MJE172G	PNP	TO-225-3	80V	3A	12.5W

View all TO-225-3 PNP Transistors ›