MJE180G Datasheet & Equivalents
NPN
TO-225
High Power
onsemi
VCEO
40V
Ic Max
3A
Pd Max
12.5W
hFE Gain
50
Quick Reference
The MJE180G is a NPN bipolar junction transistor in a TO-225 package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 3A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-225 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 3A | Max current handling |
| Power Dissipation (Pd) | 12.5W | Max thermal limit |
| DC Current Gain (hFE) | 50 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |