MJE170G Transistor Datasheet & Specifications
PNPTO-225-3General Purpose
VCEO
-
Ic Max
40V
Pd Max
3A
Gain
-65℃~+150℃
Quick Reference
The MJE170G is a PNP bipolar transistor in a TO-225-3 package. This datasheet provides complete specifications including - breakdown voltage and 40V continuous collector current. Download the MJE170G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-225-3 | Physical mounting |
| VCEO | - | Breakdown voltage |
| IC Max | 40V | Collector current |
| Pd Max | 3A | Power dissipation |
| Gain | -65℃~+150℃ | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 50MHz | Emitter-Base voltage |
| Temp | 12.5W | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|