MJE13007G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-220General Purpose
VCEO
400V
Ic Max
8A
Pd Max
80W
Gain
5

Quick Reference

The MJE13007G is a NPN bipolar transistor in a TO-220 package. This datasheet provides complete specifications including 400V breakdown voltage and 8A continuous collector current. Download the MJE13007G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
VCEO400VBreakdown voltage
IC Max8ACollector current
Pd Max80WPower dissipation
Gain5DC current gain
Frequency14MHzTransition speed
VCEsat3VSaturation voltage
Vebo9VEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJE15034GNPNTO-220350V4A50W
MJE13009-2NPNTO-220400V12A100W
KSE13007H2SMTU-HXYNPNTO-220400V8A80W
TIP50NPNTO-220400V2A40W
13007BNPNTO-220400V5A2W
BUL38DNPNTO-220450V5A80W
WGD13005NPNTO-220400V4A70W
MJE13006-HXYNPNTO-220400V8A80W
NTE2312-HXYNPNTO-220400V8A80W
FJP13007H1TU-F080-HXYNPNTO-220400V8A80W