MJD50T4G Transistor Datasheet & Specifications
NPNTO-252-2(DPAK)General Purpose
VCEO
400V
Ic Max
1A
Pd Max
15W
Gain
30
Quick Reference
The MJD50T4G is a NPN bipolar transistor in a TO-252-2(DPAK) package. This datasheet provides complete specifications including 400V breakdown voltage and 1A continuous collector current. Download the MJD50T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| VCEO | 400V | Breakdown voltage |
| IC Max | 1A | Collector current |
| Pd Max | 15W | Power dissipation |
| Gain | 30 | DC current gain |
| Frequency | 10MHz | Transition speed |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 3DD13003(RANGE:20-25) | NPN | TO-252-2(DPAK) | 400V | 1.5A | 1.25W |