MJD47T4G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNDPAKGeneral Purpose
VCEO
250V
Ic Max
1A
Pd Max
1.56W
Gain
30
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Quick Reference

The MJD47T4G is a NPN bipolar transistor in a DPAK package. This datasheet provides complete specifications including 250V breakdown voltage and 1A continuous collector current. Download the MJD47T4G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting
VCEO250VBreakdown voltage
IC Max1ACollector current
Pd Max1.56WPower dissipation
Gain30DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo10MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJD47GNPNDPAK250V1A15W
MJD47T4NPNDPAK250V1A15W
View all DPAK NPN Transistors ›