MJD44H11J Transistor Datasheet & Specifications

NPN BJT | Nexperia

NPNDPAKGeneral Purpose
VCEO
-
Ic Max
80V
Pd Max
8A
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The MJD44H11J is a NPN bipolar transistor in a DPAK package. This datasheet provides complete specifications including - breakdown voltage and 80V continuous collector current. Download the MJD44H11J datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageDPAKPhysical mounting
VCEO-Breakdown voltage
IC Max80VCollector current
Pd Max8APower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency-Transition speed
VCEsat160MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp20WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
NJVMJD31CGNPNDPAK-100V3A
MJD31CJNPNDPAK-100V3A