MJD3055T4G Datasheet & Equivalents
NPN
TO-252 (DPAK)
High Power
onsemi
VCEO
60V
Ic Max
10A
Pd Max
20W
hFE Gain
20
Quick Reference
The MJD3055T4G is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 10A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 (DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 10A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| DC Current Gain (hFE) | 20 | Base signal amplification ratio |
| Transition Frequency (fT) | 2MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MJD3055 | NPN | TO-252 (DPAK) | 60V | 10A | 20 | 1.25W | JSCJ 📄 PDF |
| BTC1510F3L-TN3-R | NPN | TO-252 (DPAK) | 150V | 10A | 20 | 1.1W | UTC 📄 PDF |