MJD2955T4G Transistor Datasheet & Specifications
PNPTO-252(DPAK)General Purpose
VCEO
60V
Ic Max
10A
Pd Max
20W
Gain
20
Quick Reference
The MJD2955T4G is a PNP bipolar transistor in a TO-252(DPAK) package. This datasheet provides complete specifications including 60V breakdown voltage and 10A continuous collector current. Download the MJD2955T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| VCEO | 60V | Breakdown voltage |
| IC Max | 10A | Collector current |
| Pd Max | 20W | Power dissipation |
| Gain | 20 | DC current gain |
| Frequency | 2MHz | Transition speed |
| VCEsat | 1.1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2DB1184Q-13 | PNP | TO-252(DPAK) | 50V | 3A | 1.2W |
| 2SAR573D3TL1 | PNP | TO-252(DPAK) | 50V | 3A | 10W |